|
|
Type of Document Dissertation Author Cao, Ying URN etd-07242006-154342 Title Investigation of InAlP Native Oxides for GaAs Metal-Oxide-Semiconductor Device Applications Degree Doctor of Philosophy Department Electrical Engineering Advisory Committee
Advisor Name Title Jay B. Brockman Committee Chair Douglas C. Hall Committee Member Gregory L. Snider Committee Member Patrick J. Fay Committee Member Thomas H. Kosel Committee Member Keywords
- Heterostructure
- Microwave Frequency Performance
- MOSFET
- GaAs
- InAlP
- Thermal Wet Oxidation
- Dry oxidation
Date of Defense 2006-07-21 Availability unrestricted Abstract The wet thermal oxides of InAlP have been carefully studied to explore thepotential of such films for use as a gate dielectric in GaAs metal-oxide-semiconductor
(MOS) device applications. The kinetics of wet thermal oxidation of InAlP epitaxial
layers lattice-matched to GaAs and the electrical properties of the resulting InAlP wet
thermal oxides when scaled to reduced thicknesses have been investigated. Also
presented are results of investigations of the dry thermal oxidation of InAlP epilayers
and the electrical properties of the resulting dry oxide films. GaAs-based metaloxide-
semiconductor field-effect transistor (MOSFET) devices with InAlP wet oxides
as the gate insulator have been fabricated and characterized on two heterostructures.
MOSFETs having a 1 ¦Ìm gate length exhibit excellent microwave performance with
a current gain cutoff frequency of 17.0 GHz and a maximum frequency of oscillation
of 74.8 GHz on a device heterostructure with a 7.5 nm thick gate oxide layer.
Files
Filename Size Approximate Download Time (Hours:Minutes:Seconds)
28.8 Modem 56K Modem ISDN (64 Kb) ISDN (128 Kb) Higher-speed Access CaoY072006.pdf 1.76 Mb 00:08:07 00:04:10 00:03:39 00:01:49 00:00:09